Publications

CuInSe2 films were prepared onto Cu-cladded substrates by ultrasonic-assisted electrodeposition using different bath compositions and a fixed deposition potential of E=-1500 mV vs Ag/AgCl. In situ electrochemical treatments named selenization and electrocrystallization, in a Se4+ electrolyte were applied to modify the morphology, film structure and the phase composition. Films were characterized by scanning electron microscopy, X-ray diffraction, Raman spectroscopy and photocurrent response. A Cu2-xSe layer develops as the electrode is introduced into the electrolyte. The presence of Cu-In, In-Se, Cu-Se, cubic, hexagonal and tetragonal CuInSe2 phases as well as elemental In and Se was observed. After selenization, partial phase dissolution and Se deposition is observed and after the electrocrystallization treatment the secondary phases such as Cu-Se, Cu-In, In and Se reduce substantially and the grain sizes increase, as well as the photocurrent response. Phase diagrams are constructed for each set of films and reaction mechanisms are proposed to explain the phase evolution.

JTD Keywords: CuInSe2, Electrodeposition, In situ electrochemical treatments, Phase composition, Surface modification

p-Type semiconducting copper indium diselenide thin films have been prepared onto In2O3:Sn substrates by a recently developed pulse electrodeposition method that consists in repeated cycles of three potential application steps. The Cu–In–Se electrochemical system and the related single component electrolytes were studied by cyclic voltammetry to identify the electrode processes and study the deposition processes. In situ atomic force microscopy measurements during the first 100 deposition cycles denote a continuous nucleation and growth mechanism. Particles removed by film sonication from some of the films were characterized by transmission electron microscopy and determined to consist in nanoscopic and crystalline CuInSe2. The remaining film is still crystalline CuInSe2, as assessed by X-ray diffraction. The chemical characterization by combined X-ray photoelectron spectroscopy, X-ray fluorescence and inductively coupled plasma optical emission spectroscopy, showed that films were Cu-poor and Se-poor. Raman characterization of the as-grown films showed that film composition varies with film thickness; thinner films are Se-rich, while thicker ones have an increased Cu–Se content. Different optical absorption bands were identified by the analysis of the UV–NIR transmittance spectra that were related with the presence of CuInSe2, ordered vacancy compounds, Se, Cu2−xSe and In2Se3. The photoelectrochemical activity confirmed the p-type character and showed a better response for the films prepared with the pulse method.

JTD Keywords: CuInSe2, Solar cells, Electrodeposition, Optical properties, As-deposited films, ITO substrate