by Keyword: EMIS sensor

Zazoua, A., Kherrat, R., Samar, M. H., Errachid, A., Jaffrezic-Renault, N., Bessueille, F., Leonard, D., (2008). Characterization of TBP containing polysiloxane membrane/insulator/semiconductor structures for hexavalent chromium detection Materials Science and Engineering: C-Biomimetic and Supramolecular Systems 5th Maghreb/Europe Meeting on Materials and Their Applications for Devices and Physical, Chemical and Biological Sensors (MADICA 2006) (ed. -----), Elsevier Science BV (Mahdia, Tunisia) 28, (5-6), 1014-1019

A hexavalent chromium-sensitive EMIS sensor (electrolyte membrane insulator semiconductor sensor) is prepared by deposition of a tributylphosphate (TBP) ionophore-containing siloprene membrane on a Si/SiO2/Si3N4 structure. The developed EMIS sensor was studied by means of impedance spectroscopy, capacitance-voltage, X-ray photoelectron spectrometry and FT-IR spectroscopy. From the flat-band shift of the EMIS structure, the nersntian response to the anionic species Cr2O7- was demonstrated. The linear range of detection is 10(-4) M to 10(-1) M and the detection limit is 10(-5) M. Sulfate and chloride anions are shown not to be interfering whereas carbonate ions present a pK(pot) equal to 0.19.

JTD Keywords: Hexavalent chromium, EMIS sensor, Tributylphosphate, Siloprene membrane