Publications

Electrolyte-gated organic transistors (EGOTs) leveraging organic semiconductors' electronic and ionic transport characteristics are the key enablers for many biosensing and bioelectronic applications that can selectively sense, record, and monitor different biological and biochemical processes at the nanoscale and translate them into macroscopic electrical signals. Understanding such transduction mechanisms requires multiscale characterization tools to comprehensively probe local electrical properties and link them with device behavior across various bias points. Here, an automated scanning dielectric microscopy toolbox is demonstrated that performs operando in-liquid scanning dielectric microscopy measurements on functional EGOTs and carries out extensive data analysis to unravel the evolution of local electrical properties in minute detail. This paper emphasizes critical experimental considerations permitting standardized, accurate, and reproducible data acquisition. The developed approach is validated with EGOTs based on blends of organic small molecule semiconductor and insulating polymer that work as accumulation-mode field-effect transistors. Furthermore, the degradation of local electrical characteristics at high gate voltages is probed, which is apparently driven by the destruction of local crystalline order due to undesirable electrochemical swelling of the organic semiconducting material near the source electrode edge. The developed approach paves the way for systematic probing of EGOT-based technologies for targeted optimization and fundamental understanding. This study presents automated scanning dielectric microscopy toolbox for comprehensive nanoscale electrical measurements of operating electrolyte-gated organic transistors (EGOTs). It highlights critical experimental practices for accurate data acquisition and easily reproducible analysis. The approach is validated using EGOTs based on blends of organic semiconductor and insulating polymer, revealing degradation at high gate voltages due to electrochemical swelling in minute details. image

JTD Keywords: Automation, Electrolyte-gated organic transistors, Nanoscale, Operando scanning dielectric microscopy, Transistor degradatio

Charge transport in electrolyte-gated organic field-effect transistors (EGOFETs) is governed by the microstructural property of the semiconducting thin film that is in direct contact with the electrolyte. Therefore, a comprehensive nanoscale operando characterization of the active channel is crucial to pinpoint various charge transport bottlenecks for rational and targeted optimization of the devices. Here, the local electrical properties of EGOFETs are systematically probed by in-liquid scanning dielectric microscopy (in-liquid SDM) and a direct picture of their functional mechanism at the nanoscale is provided across all operational regimes, starting from subthreshold, linear to saturation, until the onset of pinch-off. To this end, a robust interpretation framework of in-liquid SDM is introduced that enables quantitative local electric potential mapping directly from raw experimental data without requiring calibration or numerical simulations. Based on this development, a straightforward nanoscale assessment of various charge transport bottlenecks is performed, like contact access resistances, inter- and intradomain charge transport, microstructural inhomogeneities, and conduction anisotropy, which have been inaccessible earlier. Present results contribute to the fundamental understanding of charge transport in electrolyte-gated transistors and promote the development of direct structure-property-function relationships to guide future design rules. This study delves into the charge transport properties of electrolyte-gated organic field-effect transistors by employing in-liquid scanning dielectric microscopy. By introducing a novel interpretation framework, the research achieves quantitative mapping of the local electric potential, facilitating a detailed assessment of charge transport bottlenecks across all operational regimes. The findings can fosterthe formulation ofstructure-property-function relationships for device optimization.image

JTD Keywords: Conduction anisotropy, Conductivity maps, Electrolyte-gated organic field-effect transistors, Nanoscale, Operando, Operation regimes, Potential maps, Scanning dielectric microscopy